2014. 3. 31 1/3 semiconductor technical data KTA2014E epitaxial planar pnp transistor revision no : 1 general purpose application. switching application. features h excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). h low noise : nf=1db(typ.), 10db(max.). h complementary to ktc4075e. h small package. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma base current i b -30 ma collector power dissipation p c 100 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-6v, i c =-2ma 70 - 400 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.3 v transition frequency f t v ce =-10v, i c =-1ma 80 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4 7 pf noise figure nf v ce =-6v, i c =-0.1ma f=1khz, rg=10k ? - 1.0 10 db note : h fe classification o(2):70 q 140, y(4):120 q 240, gr(6):200 q 400
2014. 3. 31 2/3 KTA2014E revision no : 1
2014. 3. 31 3/3 KTA2014E revision no : 1
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